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TFS757 Datasheet, PDF (28/36 Pages) Power Integrations, Inc. – Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs
TFS757-764HG
Parameter
Symbol
Standby Circuit Protection (cont.)
ENABLE Pin Current
Limit Selection Range #2
ILIM(2)(DSB)
Conditions
SOURCE = 0 V; TJ = 0 °C to 100 °C
(Unless Otherwise Specified)
Start-up
Min
Typ
Max
8.5-18
ENABLE Pin Current
Limit Selection Range #3
ILIM(3)(DSB)
Start-up
18-33
ENABLE Pin Current
Limit Selection Range #4
ILIM(4)(DSB)
Start-up
33-60
ILIM(1)(DSB)
IL = 20 mA, di/dt = 95 mA/ms, TJ = 25 °C
450
500
550
ILIM(2)(DSB) IL = 20 mA, di/dt = 125 mA/ms, TJ = 25 °C
600
650
700
Standby Current Limit
ILIM(3)(DSB) IL = 20 mA, di/dt = 143 mA/ms, TJ = 25 °C
675
750
825
ILIM(4)(DSB) IL = 20 mA, di/dt = 105 mA/ms, TJ = 25 °C
495
550
605
Δ ILIM
ILIM (IL = 100 mA) / ILIM (IL = 20 mA)
di/dt = 125 mA/ms
80
General Circuit Protection
Power Coefficient
I2f
I f = I × f 2
LIM(2)(DSB)(TYP) S(SB)(OSC)(TYP)
TJ = 25 °C
0.9 × I2f
I2f
1.12 × I2f
Initial Current Limit
Leading Edge
Blanking Time (Main)
IINIT
tLEB(D)
TJ = 25 °C
TJ = 25 °C
0.75 ×
ILIM(MIN)
170
215
Leading Edge Blanking
Time (Standby)
tLEB(DSB)
TJ = 25 °C
170
215
Current Limit
Delay (Main)
tILD(D)
TJ = 25 °C
150
Current Limit
Delay (Standby)
tILD(DSB)
TJ = 25 °C
150
Thermal Shutdown
Temperature
TSD
118
Thermal Shutdown
Hysteresis
TSD(HYST)
55
Auto-Restart ON-Time
at fOSC Standby
tAR
TJ = 25 °C
64
Auto-Restart Duty
Cycle Standby
DCAR
TJ = 25 °C
2.2
Supply Current
IS1
DRAIN Supply Current
IS2
NOTES:
EN Current > IDIS
(No MOSFETs Switching)
EN Open (Standby MOSFET
Switching at fOSC)
400
750
1000
600
950
1200
A. The current limit is boosted for the first 34 ms of main supply switching and returns to normal level after this period.
B. VDDH(SHUNT) minus VDDH(UV_ON) is equal to 250 mV minimum.
C. Level 1 RFB = open, Level 2 RFB = 511 kW, Level 3 RFB = 232 kW.
D. Level 1 REN = open, Level 2 REN = 280 kW, Level 3 REN = 137 kW, Level 4 REN = 63.4 kW.
Units
mA
mA
mA
mA
%
A2Hz
ns
ns
ns
ns
°C
°C
ms
%
mA
28
Rev. C 02/11
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