TFS757 Datasheet, PDF (27/36 Pages) Power Integrations, Inc. – Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs

TFS757-764HG
Parameter
Symbol
High-Side Main MOSFET (cont.)
High-Side Bias
Shunt Voltage
V_DDH(SHUNT)
High-Side Undervoltage
ON-Threshold
V_DDH(UVON)
High-Side Undervoltage
OFF-Threshold
V_DDH(UVOFF)
High-Side Shunt
Hysteresis Voltage
V_DDH(HYST)
Standby MOSFET
ON-State
Resistance
R_DS(ON)(DS)
OFF-State Drain
Leakage Current
I_DSS1(DS)
I_DSS2(DS)
Breakdown Voltage
DRAIN Supply Voltage
Standby Controller
Output Frequency
in Standard Mode
Maximum Duty Cycle
ENABLE Pin Upper
Turnoff Threshold
Current
BV_DSS(DS)
V_DSB(START)
f_S(SB)
DC_MAX(DSB)
I_DIS
ENABLE Pin Voltage
V_EN
I_CH1
BYPASS Pin
Charge Current
I_CH2
BYPASS Pin Voltage
BYPASS Pin Voltage
Hysteresis
V_BP
V_BP(HYST)
BYPASS Pin Shunt
Voltage
V_BP(SHUNT)
Standby Circuit Protection
ENABLE Pin Current
Limit Selection Range #1
I_LIM(1)(DSB)
Conditions
SOURCE = 0 V; T_J = 0 °C to 100 °C
(Unless Otherwise Specified)
See Note B
I_DDH = 2 mA
See Note B
See Note B
See Note B
I = I _{DSB LIM(3)(DSB)}
T_J = 25 °C
T_J = 100 °C
V_BP = 6.2 V
V_EN = 0 V
V_DS = 560 V
T_J = 100 °C
V_BP = 6.2 V
V_EN = 0 V
V_DS = 375 V,
T_J = 50 °C
V_BP = 6.2 V, V_EN = 0 V,
T_J = 25 °C
T_J = 25 °C
Average
Peak-to-peak Jitter
I_L = 40 mA
I_EN = 25 mA
I_EN = -25 mA
V_BP = 0 V,
T_J = 25 °C
V_BP = 4 V,
T_J = 25 °C
V_DS = 50 V
I_BP = 2 mA
Start-up
Min
Typ
Max Units
11.4
12.1
12.8
V
10.7
11.1
11.5
V
9.5
9.9
10.3
V
0.7
1.2
1.5
V
3.7
4.37
W
5.5
6.25
200
mA
15
725
V
50
V
124
132
140
kHz
8
67
70
73
%
-150
-115
-80
mA
2.0
2.4
2.8
V
0.8
1.2
1.6
-5
-3.2
-2
mA
-4
-1.5
0
5.50
5.70
5.90
V
0.80
1.0
1.20
V
5.8
6.0
6.2
V
0-8.5
mA
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27
Rev. C 02/11