CM1500HC-66R_12 Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
4000
VCC  2500V, VGE = ±15V
Tj = 150°C, RG(off ) = 5.6Ω
3000
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
20
V_CC  2500V, V_GE = ±15V
R_G(on) = 1.6Ω, R_G(off) = 5.6Ω
Tj = 150°C
15
2000
10
1000
5
0
0
1000
2000
3000
4000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
4000
VCC  2500V, di/dt < 9kA/µs
Tj = 150°C
3000
0
0
1000
2000
3000
4000
Collector-Emitter Voltage [V]
2000
1000
0
0
1000
2000
3000
4000
Emitter-Collector Voltage [V]
December 2012 _(HVM-1054-D)
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