CM1500HC-66R_12 Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, IC = 1500A
7
VGE = ±15V, L_S = 100nH
Tj = 125°C, Inductive load
6
Eon
5
4
Eoff
3
2
Erec
1
0
0
2
4
6
8
10 12
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, IC = 1500A
7
VGE = ±15V, L_S = 100nH
Tj = 150°C, Inductive load
6
Eon
5
4
Eoff
3
2
Erec
1
0
0
2
4
6
8
10 12
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 1800V, V_GE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
L_S = 100nH, Tj = 125°C
Inductive load
1
tf
td(off)
td(on)
0.1
tr
0.01
100
1000
Collector Current [A]
10000
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 1800V, V_GE = ±15V
R_G(on) = 1.6Ω, R_G(off) = 5.6Ω
L_S = 100nH, Tj = 150°C
Inductive load
1
tr
td(off)
td(on)
0.1
tf
0.01
100
1000
Collector Current [A]
10000
December 2012 _(HVM-1054-D)
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