CM1500HC-66R_12 Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
Conditions
V_EC
Emitter-collector voltage
(Note 2)
I_E = 1500 A ^{(Note 4)}
V_GE = 0 V
t_rr
Reverse recovery time
(Note 2)
I_rr
Q_rr
E_rec(10%)
E_rec
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
(Note 2)
(Note 2)
(Note 2)
(Note 5)
V_CC = 1800 V
I_C = 1500 A
V_GE = ±15 V
R_G(on) = 1.6 Ω
L_s = 100 nH
Inductive load
(Note 2)
(Note 6)
Limits
Min Typ Max
Unit
T_j = 25°C
— 2.15 —
T_j = 125°C — 2.30 2.80
V
T_j = 150°C
—
2.25
—
T_j = 25°C
— 0.50 —
T_j = 125°C — 0.70
µs
T_j = 150°C
—
0.80
—
T_j = 25°C
— 1250 —
T_j = 125°C — 1500 —
A
T_j = 150°C — 1550 —
T_j = 25°C
— 1050 —
T_j = 125°C — 1700
µC
T_j = 150°C — 2000 —
T_j = 25°C
1.05 —
T_j = 125°C — 1.75
J
T_j = 150°C
—
2.00
—
T_j = 25°C
1.20 —
T_j = 125°C — 2.00
J
T_j = 150°C
—
2.30
—
THERMAL CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance
Contact thermal resistance
Conditions
Limits
Min Typ Max
Unit
Junction to Case, IGBT part
—
—
8.0 K/kW
Junction to Case, FWDi part
—
· Case to heat sink, _grease = 1W/m k, D_(c-s) = 100m
—
— 15.0 K/kW
6.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
M_s
M_t
m
CTI
d_a
d_s
L_{P CE}
R_{CC’+EE’}
r_g
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
T_C = 25°C
T_C = 25°C
Limits
Min Typ Max
Unit
7.0
—
22.0 N·m
3.0
—
6.0 N·m
1.0
—
3.0 N·m
—
1.2
—
kg
600
—
—
—
19.5 —
—
mm
32.0 —
—
mm
—
11.0
—
nH
— 0.12
—
mΩ
—
1.5
—
Ω
Note1. Pulse width and repetition rate should be such that junction temperature (T_j) does not exceed T_opmax rating(150°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD_i).
3. Junction temperature (T_j) should not exceed T_jmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E_on(10%) / E_off(10%) / E_rec(10%) are the integral of 0.1V_CE x 0.1I_C x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012 _(HVM-1054-D)
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