CM400C1Y-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
10⁴
t_d(off)
t_f
10²
10³
t_d(on)
t_r
10¹
10^-1
V_CC = 600V
V_GE = ±15V
I_C = 600A
T_j = 150°C
Inductive
Load
10²
10⁰
10¹
10²
GATE RESISTANCE, R_G, (Ω)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
10¹
10¹
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
Inductive Load
I_rr
t_rr
10²
EMITTER CURRENT, I_E, (AMPERES)
10³
GATE CHARGE VS. VGE
20
V_CC = 600V
I_C = 400A
15 ^{Tj = 25°C}
10²
10¹
10¹
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
I_rr
t_rr
10²
EMITTER CURRENT, I_E, (AMPERES)
10³
10
5
0
0
500
1000
GATE CHARGE, Q_G, (nC)
1500
12/12 Rev. 0
7