CM400C1Y-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
Thermal Resistance Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case^*2
Thermal Resistance, Junction to Case^*2
Contact Thermal Resistance,
Case to Heatsink^*2
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Per IGBT
Per IFWDi
Thermal Grease Applied
(Per 1/2 Module)^*6
Mechanical Characteristics
Characteristics
Mounting Torque
Weight
Flatness of Baseplate
Symbol
M_t
M_s
m
e_c
Test Conditions
Main Terminals, M6 Screw
Mounting to Heatsink, M6 Screw
On Centerline X, Y^*7
Recommended Operating Conditons, T_a = 25°C
Characteristics
Symbol
Test Conditions
(DC) Supply Voltage
V_CC
Applied Across C1-E2
Gate (-Emitter Drive) Voltage
V_GE(on)
Applied Across G1-Es1 / G2-Es2
External Gate Resistance
R_G
Per Switch
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
0
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Y
X
3 mm
30.7
44.2
Tr2 Tr2
Di2 Di2
Di1 Tr1
Di1 Tr1
Min.
Typ.
Max. Units
—
—
56
K/kW
—
—
95
K/kW
—
18
—
K/kW
Min.
Typ.
Max. Units
31
35
40
in-lb
31
35
40
in-lb
—
580
— Grams
-100
—
+100
µm
Min.
Typ.
Max. Units
—
600
850
Volts
13.5 15.0 16.5 Volts
0
—
10
Ω
0
35.3
48.8
BOTTOM
LABEL SIDE
BOTTOM
BOTTOM
– CONCAVE
+ CONVEX
Tr1/Tr2: IGBT
LABEL SIDE
Di1/Di2: FWDi
4
12/12 Rev. 0