CM400C1Y-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (G-E Short-Circuited)
Gate-Emitter Voltage (C-E Short-Circuited)
Collector Current (DC, T_C = 124°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2,*4
Emitter Current (Pulse, Repetitive)^*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature
Maximum Case Temperature^*2
Operating Junction Temperature
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
0
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
30.7
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
44.2
temperature (T_j(max)) rating.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
V_ISO
T_j(max)
T_C(max)
T_j(opr)
T_stg
Tr2 Tr2
Di2 Di2
Di1 Tr1
Di1 Tr1
Rating
1200
±20
350
800
2670
350
800
2500
175
125
-40 to +150
-40 to +125
0
35.3
48.8
Tr1/Tr2: IGBT
LABEL SIDE
Di1/Di2: FWDi
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
°C
°C
°C
°C
2
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