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| CM1200E4C-34N Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Voltst
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
101
td(off)
100
td(on)
tr
tf
10-1
10-2
102
VCC = 850V
VGE = ±15V
RG(on) = 0.6â¦
RG(off) = 3.3â¦
Tj = 125°C
Inductive Load
103
104
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.8
19K/kW
(IGBT)
0.6
Rth(j-c) =
42K/kW
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
100
101
TIME, (s)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
500
400
300
200
100
0
0
3000
VCC = 850V
VGE = ±15V
RG(on) = 0.6â¦
Tj = 125°C
Inductive Load
400 800 1200 1600 2000 2400
EMITTER CURRENT, IE, (AMPERES)
REVERSE BIAS
SAFE OPERATING AREA
(RBSOA)
2500
2000
1500
1000
500
VCC ⤠1200V
VGE = ±15V
Tj = 125°C
RG(off) = 3.3â¦
Module
Chip
0
0
500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
06/13 Rev. 2
7
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