CM1200E4C-34N Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (T_C = 75°C)
Collector Current (Pulse)^*1
Emitter Current
Emitter Current (Pulse)^*1
Maximum Power Dissipation (T_C = 25°C, IGBT Part)^*3
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, 1 minute)
Maximum Short Circuit Pulse Width (V_CC = 1200V, V_CES ≤ 1700V, V_GE = 15V, T_j = 125°C)
V_CES
V_GES
I_C
I_CM
I_E^*2
I_EM^*2
P_C^*3
T_j
T_op
T_stg
V_ISO
t_psc
*1 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_opr(max) rating (125°C).
*2 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*3 Junction temperature (T_j) should not increase beyond maximum junction temperature T_j(max) rating (150°C).
Rating
1700
±20
1200
2400
1200
2400
6500
-40 to +150
-40 to +125
-40 to +125
4000
10
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
°C
°C
°C
Volts
µs
2
06/13 Rev. 2