CM1200E4C-34N Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
10³
C_ies
10²
10¹
C_oes
V_GE = 0V
T_j = 25°C
f = 100kHz
10⁰
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
1200
1000
800
600
400
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
V_CC = 850V
V_GE = ±15V
R_G(on) = 0.6Ω
R_G(off) = 3.3Ω
T_j = 125°C
INDUCTIVE LOAD
E_on
E_off
E_rec
200
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V_CC = 850V
I_C = 1200A
15 ^{Tj = 25°C}
10
5
0
0
2
4
6
8 10
GATE CHARGE, Q_G, (μC)
2000
1600
1200
800
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
V_CC = 850V
V_GE = ±15V
I_C = 1200A
T_j = 125°C
INDUCTIVE LOAD
E_on
E_off
E_rec
400
0
0 2 4 6 8 10 12
GATE RESISTANCE, R_G, (Ω)
6
06/13 Rev. 2