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| CM100TX-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TX-24S
Six IGBT NX-Series Module
100 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
td(off)
tf
102
101
100
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 150°C
Inductive Load
101
GATE RESISTANCE, RG, (â¦)
102
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 150°C
Inductive Load
Irr
102
trr
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103 VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive Load
Irr
102
trr
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
GATE CHARGE VS. VGE
20
IC = 100A
VCC = 600V
15
10
5
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
0
0
100
200
300
400
GATE CHARGE, QG, (nC)
03/13 Rev. 4
7
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