CM100TX-24S Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM100TX-24S
Six IGBT NX-Series Module
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
200
T_j =
25°C
15
150
V_GE = 20V
13.5
12
11
100
10
50
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 100A
4
I_C = 40A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
T_j = 150°C
2.0
1.5
1.0
0.5
0
0
10³
10²
50
100
150
200
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
T_j = 25°C
T_j = 125°C
T_j = 150°C
10¹
10⁰
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
03/13 Rev. 4
5