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| CM100TX-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TX-24S
Six IGBT NX-Series Module
100 Amperes/1200 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
102 VGE = 0V
101
Cies
100
10-1
Coes
Cres
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
tf
RG = 6.2Ω
Tj = 125°C
102 Inductive Load
td(off)
td(on)
101
tr
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
tf
RG = 6.2Ω
Tj = 150°C
102 Inductive Load
td(off)
td(on)
101
tr
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
102
101
100
td(off)
tf
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, (â¦)
102
6
03/13 Rev. 4
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