QIS1790001 Datasheet, PDF (6/8 Pages) Powerex Power Semiconductors – Single IGBT Module 900 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Preliminary
3x10³
CAPACITANCE VS.
(TYPICAL)
VCE
V_GE = 0V
3x10²
C_ies
3x10¹
3x10⁰
C_oes
C_res
3x10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
10³
t_d(off)
t_f
t_d(on)
10²
10¹
t_r
10⁰
3x10¹
V_CC = 1000V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
3x10²
3x10³
COLLECTOR CURRENT, I_C, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
10³
t_d(off)
t_f
t_d(on)
10²
10¹
t_r
10⁰
3x10¹
V_CC = 1000V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
Inductive Load
3x10²
3x10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10⁴
10³
t_d(on)
t_d(off)
10²
10¹
0.03
t_r ^tf
V_CC = 1000V
V_GE = ±15V
I_C = 900A
T_j = 125°C
Inductive Load
0.33
3.3
33
EXTERNAL GATE RESISTANCE, R_G, (Ω)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6
11/14 Rev. 3