QIS1790001 Datasheet, PDF (2/8 Pages) Powerex Power Semiconductors – Single IGBT Module 900 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = TBD°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current (T_C = TBD°C)^*2,*4
Emitter Current (Pulse, Repetitive)^*3
Maximum Junction Temperature
Maximum Case Temperature^*2
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
T_j(max)
T_C(max)
T_j(op)
T_stg
V_ISO
Preliminary
Rating
1700
±20
900
1800
TBD
900
1800
175
125
-40 to +150
-40 to +125
3500
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
°C
°C
°C
Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 3