QIS1790001 Datasheet, PDF (5/8 Pages) Powerex Power Semiconductors – Single IGBT Module 900 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QIS1790001
Single IGBT Module
900 Amperes/1700 Volts
Preliminary
1800
1500
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
T_j =
25°C
V_GE = 20V
15
11
1200
900
10
600
9
300
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
T_j = 25°C
8
I_C = 1800A
6
I_C = 900A
4
I_C = 540A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
4.5
4.0
V_GE = 15V
T_j = 25°C
3.5
T_j = 125°C
3.0
T_j = 150°C
2.5
2.0
1.5
1.0
0.5
0
0 300 600 900 1200 1500 1800
COLLECTOR CURRENT, I_C, (AMPERES)
3x10³
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
3x10²
T_j = 25°C
T_j = 125°C
T_j = 150°C
3x10¹
01 2
3 456
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 3
5