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| CM2500DY-24S Datasheet, PDF (6/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBTMOD⢠HVIGBT Module
2500 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
103
VCC = 600V
VGE = ±15V
102 RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
101
102
103
104
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
103
VCC = 600V
VGE = ±15V
102 RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
101
102
103
104
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
GATE CHARGE VS. VGE
20
IC = 2500A
VCC = 600V
15
10
5
0
0
103
2000 4000 6000
GATE CHARGE, QG, (nC)
8000
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
102 VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Eon
Eoff
Err
101
102
103
104
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
102 VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Eon
Eoff
Err
101
102
103
104
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
102 VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 125°C
Eon
Eoff
Err
101
10-1
100
101
GATE RESISTANCE, RG, (â¦)
102 VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 150°C
Eon
Eoff
Err
101
10-1
100
101
GATE RESISTANCE, RG, (â¦)
10-1
10-2
10-3
10-5
10-4
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.16°C/W
(IGBT)
Rth(j-c) =
0.17°C/W
(FWDi)
10-3 10-2 10-1
TIME, (s)
100 101
6
5/12 Rev. 1
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