CM2500DY-24S Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts

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CM2500DY-24S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
2500 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*4
T_C = 100°C, R₁₀₀ = 493Ω^*4
Approximate by Equation^*6
T_C = 25°C^*4
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
Case to Heatsink^*4
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per IGBT
Per FWDi
Thermal Grease Applied
(Per 1/2 Module)^*7
—
—
13
K/kW
—
—
22
K/kW
—
3.1
—
K/kW
Mechanical Characteristics
Mounting Torque
M_t
M_s
Creepage Distance
d_s
Clearance
d_a
Weight
m
Flatness of Baseplate
e_c
Main Terminals, M6 Screw
Auxiliary Terminals, M4 Screw
Mounting, M5 Screw
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
On Centerline X, Y^*8
31
35
40
in-lb
12
13
15
in-lb
22
27
31
in-lb
16
—
—
mm
25
—
—
mm
16
—
—
mm
24
—
—
mm
—
2000
— Grams
-50
—
+100
µm
Recommended Operating Conditons, T_a = 25°C
DC Supply Voltage
V_CC
Applied Across P-N Terminals
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across G-E Terminals
External Gate Resistance
R_G
Per Switch
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure
below.
Tr2
Di1
Di2
Tr1
Tr2
Tr2
Di1
Di2
Di2
Tr1
Y
ec
X
RECOMMENDED AREA FOR EVEN APPLICATION
OF THERMALLY CONDUCTIVE GREASE
(PER BASEPLATE)
Tr2
Di1
Di2
Tr1
Tr2
Tr2
Di1
Di2
Tr1
Di2
—
13.5
0
Tr2
Di1
Di2
Tr1
Tr2
Di1
Tr1
Di2
600
850
Volts
15.0 16.5 Volts
—
2
Ω
Tr2
Di1
Di1
Di2
Tr1
Tr1
Tr2
Di1
Di1
Tr1
Di2
Tr1
Th
96.2 ^101.2
82.7 ^87.7
59.2
54.2
40.7 ^45.7
24.5
0
MOUNTING SIDE
MOUNTING SIDE
- CONCAVE
+ CONVEX
MOUNTING
SIDE
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi Th: NTC Thermistor
LABEL SIDE
4
5/12 Rev. 1