CM2500DY-24S Datasheet, PDF (5/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts

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CM2500DY-24S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
2500 Amperes/1200 Volts
5000
4000
OUTPUT CHARACTERISTICS
(TYPICAL)
V_GE = 20V
13.5
12
15
3000
11
2000
10
1000
9
T_j = 25°C
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
T_j = 125°C
T_j = 150°C
10³
10²
10¹
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
t_d(on)
t_f
10²
t_r
10¹
10²
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
T_j = 150°C
2.0
1.5
1.0
0.5
0
0 1000 2000 3000 4000 5000
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
C_ies
10²
C_oes
10¹
C_res
10⁰
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
t_d(off)
t_d(on)
t_r
10²
10⁰
t_f
V_CC = 600V
V_GE = ±15V
I_C = 2500A
T_j = 125°C
Inductive Load
10¹
10²
EXTERNAL GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 5000A
6
I_C = 2500A
4
I_C = 1000A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_d(on)
t_f
10²
t_r
10¹
10²
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
t_d(off)
t_d(on)
t_r
t_f
10²
10⁰
V_CC = 600V
V_GE = ±15V
I_C = 2500A
T_j = 150°C
Inductive Load
10¹
10²
EXTERNAL GATE RESISTANCE, R_G, (Ω)
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