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CM1800DY-34S Datasheet, PDF (6/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD™ HVIGBT Series Module 1800 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
104
VCC = 1000V
VGE = ±15V
IC = 1800A
Tj = 125°C
Eon
Eoff
103
Err
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
104
VCC = 1000V
VGE = ±15V
IC = 1800A
Tj = 150°C
Eon
Eoff
103
Err
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
VCC = 1000V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
103
trr
102
10-1
100
101
GATE RESISTANCE, RG, (Ω)
GATE CHARGE VS. VGE
20
VCC = 1000V
IC = 1800A
15
10
5
0
0 2000 4000 6000 8000 1000012000
GATE CHARGE, QG, (nC)
102
10-1
100
101
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-1
Single Pulse
TC = 25°C
Per Unit Base =
10-2
Rth(j-c) =
16K/kW
(IGBT)
Rth(j-c) =
27K/kW
(FWDi)
10-3
10-3
10-2
10-1
100
101
TIME, (s)
102
102
103
104
EMITTER CURRENT, IE, (AMPERES)
TURN-OFF SWITCHING SOA
(RBSOA)
2x
VCC = ≤1200V
VGE = ±15V
RG = 0~2 Ω
1x
Tj = 25 ~ 150°C
Normal Load Operations
(Continuous)
Tj ≤ 175°C
Unusual Load Operations
(Limited Period)
0
0 400 800 1200 1600 2000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
6
5/12 Rev. 1