CM1800DY-34S Datasheet, PDF (5/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD™ HVIGBT Series Module 1800 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
4000
3500
3000
2500
OUTPUT CHARACTERISTICS
(TYPICAL)
12
15
V_GE = 20V
13.5
11
2000
10
1500
1000
9
500
T_j = 25°C
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
T_j = 125°C
T_j = 150°C
10³
10²
10¹
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10⁴
V_CC = 1000V
V_GE = ±15V
I_C = 1800A
T_j = 150°C
Inductive Load
t_d(on)
10³
t_d(off)
t_f
t_r
10²
10^-1
10⁰
10¹
GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
T_j = 150°C
2.0
1.5
1.0
0.5
0
0 600 1200 1800 2400 3200 3600
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
C_ies
10²
10¹
C_oes
C_res
10⁰
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10³
10²
10¹
10²
V_CC = 1000V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
E_on
E_off
E_rr
10³
COLLECTOR CURRENT, I_C, (AMPERES)
EMITTER CURRENT, I_E, (AMPERES)
10⁴
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 3600A
6
I_C = 1800A
4
I_C = 720A
2
0
6
10⁴
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
10³
t_d(on)
t_f
10²
10¹
10²
t_r
V_CC = 1000V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10³
10²
10¹
10²
V_CC = 1000V
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
E_on
E_off
E_rr
10³
COLLECTOR CURRENT, I_C, (AMPERES)
EMITTER CURRENT, I_E, (AMPERES)
10⁴
5/12 Rev. 1
5