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CM1800DY-34S Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – Dual Half-Bridge IGBTMOD™ HVIGBT Series Module 1800 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1800DY-34S
Dual Half-Bridge IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (DC, TC = 105°C)*2,*4
Collector Current (Pulse, Repetitive)*3
Total Maximum Power Dissipation (TC = 25°C)*2,*4
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*2
Emitter Current, Free Wheeling Diode Forward Current (Pulse, repetitive)*3
Symbol
VCES
VGES
IC
ICRM
Ptot
IE*1
IERM*1
Rating
1700
±20
1800
3600
11535
1800
3600
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Module
Characteristics
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
Maximum Junction Temperature
Maximum Case Temperature*4
Operating Junction Temperature
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Tr2
Di1
Di2
Tr1
Tr2
Di1
Di2
Tr1
Symbol
VISO
Tj(max)
TC(max)
Tj(opr)
Tstg
Tr2
Di1
Di2
Tr1
Tr2
Di1
Di2
Tr1
Tr2
Di1
Di2
Tr1
Tr2
Di1
Di2
Tr1
Rating
4000
175
125
-40 to +150
-40 to +125
Tr2
Tr2
Di1
Di1
Di2
Di2
Tr1
Tr1
Tr2
Tr2
Di1
Di1
Di2
Tr1
Di2
Tr1
Th
Units
V
°C
°C
°C
°C
96.2 101.2
82.7 87.7
59.2
54.2
40.7 45.7
24.5
0
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi Th: NTC Thermistor
LABEL SIDE
2
5/12 Rev. 1