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| CM100RX-12A Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD⢠+ Brake NX-Series Module
100 Amperes/600 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
100
10-1
101
VCC = 300V
VGE = ±15V
RG = 6.2â¦
Tj = 125°C
Inductive Load
Eon
Eoff
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102 VCC = 300V
VGE = ±15V
IE = 100A
Tj = 125°C
101 Inductive Load
100
Err
10-1
100
101
102
GATE RESISTANCE, RG, (â¦)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
Tj = 25°C
Tj = 125°C
101
100
0
1
2
3
4
FORWARD VOLTAGE, VF, (VOLTS)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
102 VCC = 300V
VGE = ±15V
IC = 100A
Tj = 125°C
101 Inductive Load
Eon
Eoff
100
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
101
VCC = 300V
VGE = ±15V
RG = 6.2â¦
Tj = 125°C
Inductive Load
100
Err
10-1
100
101
102
GATE RESISTANCE, RG, (â¦)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10010-3
10-2
10-1
100
101
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.31°C/W
(IGBT)
Rth(j-c) =
0.59°C/W
(FWDi)
10-5
10-4
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
10010-3
10-2
10-1
100
10-1
10-2
10-3
10-3
101
10-1
101
102
103
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
3.5
VGE = 15V
3.0
Tj = 25°C
Tj = 125°C
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100
COLLECTOR-CURRENT, IC, (AMPERES)
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.44°C/W
(IGBT)
Rth(j-c) =
0.85°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
6
Rev. 3/09
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