CM100RX-12A Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Brake Sector
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current
Forward Voltage Drop
I_CES
V_GE(th)
I_GES
V_CE(sat)
C_ies
C_oes
C_res
Q_G
I_RRM^*2
V_FM^*2
V_CE = V_CES, V_GE = 0V
—
I_C = 5mA
5
V_GE = V_GES, V_CE = 0V
—
I_C = 50A, V_GE = 15V, T_j = 25°C^*5
—
I_C = 50A, V_GE = 15V, T_j = 125°C^*5
—
I_C = 50A, V_GE = 15V, Chip
—
—
V_CE = 10V, V_GE = 0V
—
—
V_CC = 300V, I_C = 50A, V_GE = 15V
—
V_R = V_RRM
—
I_F = 50A, T_j = 25°C^*5
—
I_F = 50A, T_j = 125°C^*5
—
I_F = 50A, Chip
—
—
1.0
mA
6
7
Volts
—
0.5
µA
1.7
2.1
Volts
1.9
—
Volts
1.6
—
Volts
—
9.3
nF
—
1.0
nF
—
0.3
nF
200
—
nC
—
1.0
mA
2.0
2.8
Volts
1.95
—
Volts
1.9
—
Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
R_th(j-c)Q
R_th(j-c)D
R_th(j-f)
R_Gint
R_G
Test Conditions
Per IGBT^*1
Per FWDi^*1
Case to Heatsink (Per 1 Module)
Thermal Grease Applied^*1*7
T_C = 25°C
Min.
Typ.
Max. Units
—
—
0.44 °C/W
—
—
0.85 °C/W
—
0.015
—
°C/W
—
0
—
Ω
13
—
125
Ω
NTC Thermistor Sector, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
R
∆R/R
B_(25/50)
P₂₅
T_C = 25°C^*1
T_C = 100°C, R₁₀₀ = 493Ω^*1
B = (InR₁ – InR₂) / (1/T₁ – 1/T₂)^*6
T_C = 25°C^*1
4.85 5.00
–7.3
—
—
3375
—
—
**Thermal resistance values are per 1 element.
*1 Case temperature (T_C) and heatsink temperature (T_f) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I_E, I_EM, V_EC, t_rr and Q_rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
I_F, I_FM, I_RRM, V_FM and V_RRM represent ratings and characteristics of the clamp diode.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
4
Rev. 3/09