CM100RX-12A Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
I_CES
V_GE(th)
I_GES
V_CE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Turn-on Rise Time
Switch
Turn-off Delay Time
Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
t_rr^*2
Qrr^*2
V_EC^*2
V_CE = V_CES, V_GE = 0V
—
I_C = 10mA, V_CE = 10V
5
V_GE = V_GES, V_CE = 0V
—
I_C = 100A, V_GE = 15V, T_j = 25°C^*5
—
I_C = 100A, V_GE = 15V, T_j = 125°C^*5
—
I_C = 100A, V_GE = 15V, Chip
—
—
V_CE = 10V, V_GE = 0V
—
—
V_CC = 300V, I_C = 100A, V_GE = 15V
—
—
V_CC = 300V, I_C = 100A,
—
V_GE = ±15V,
—
R_G = 6.2Ω, I_E = 100A,
—
Inductive Load Switching Operation
—
—
I_E = 100A, V_GE = 0V, T_j = 25°C^*5
—
I_E = 100A, V_GE = 0V, T_j = 125°C^*5
—
I_E = 100A, V_GE = 0V, Chip
—
—
1.0
mA
6
7
Volts
—
0.5
µA
1.7
2.1
Volts
1.9
—
Volts
1.6
—
Volts
—
13.3
nF
—
1.4
nF
—
0.45
nF
270
—
nC
—
100
ns
—
100
ns
—
300
ns
—
600
ns
—
200
ns
4.8
—
µC
2.0
2.8
Volts
1.95
—
Volts
1.9
—
Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Symbol
R_th(j-c)Q
R_th(j-c)D
R_th(j-f)
Test Conditions
Per IGBT^*1
Per FWDi^*1
Case to Heatsink (Per 1 Module)
Thermal Grease Applied^*1*7
Min.
Typ.
—
—
—
—
—
0.015
Internal Gate Resistance
R_Gint
T_C = 25°C
—
0
External Gate Resistance
R_G
6
—
**Thermal resistance values are per 1 element.
*1 Case temperature (T_C) and heatsink temperature (T_f) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I_E, I_EM, V_EC, t_rr and Q_rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
I_F, I_FM, I_RRM, V_FM and V_RRM represent ratings and characteristics of the clamp diode.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Max.
0.31
0.59
—
—
62
Units
°C/W
°C/W
°C/W
Ω
Ω
Rev. 3/09
3