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FK10UM-10 Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE
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MITSUBISHI Nch POWER MOSFET
FK10UM-10
HIGH-SPEED SWITCHING USE
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
5
5
IS = 10A
3
2
trr
VGS = 0V 3
VDD = 250V 2
102
101
7
7
5
5
3
2
101
7
5
101
Irr
23
5 7 102
3
2
Tch = 25°C 100
Tch = 150°C 7
5
2 3 5 7 103
SOURCE CURRENT dis/dt (–A/µs)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
103
102
7
5
dis/dt = –100A /µs
VGS = 0V
VDD = 250V
7
5
3
3
2
2
102
trr
7
5
Irr
3
2
101
100 2 3
5 7 101
101
7
5
3
Tch = 25°C 2
Tch = 150°C
100
2 3 5 7 102
SOURCE CURRENT IS (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D=1
7 0.5
5
3 0.2
2 0.1
PDM
10–1
7
0.05
5
0.02
3
0.01
2
Single Pulse
tw
T
D=
tw
T
10–2
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999