FK10UM-10 Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FK10UM-10
MITSUBISHI Nch POWER MOSFET
FK10UM-10
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
φ 3.6
1.0
0.8
2.54
2.54
0.5
2.6
qwe
wr
¡VDSS ................................................................................ 500V
¡rDS (ON) (MAX) .............................................................. 1.13Ω
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
500
±30
10
30
10
30
125
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999