FK10UM-10 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Ciss
10³
7
5
3
2
10²
Coss
7
5
3
2
10^{1 Tch = 25°C}
7
5
f = 1MHz
VGS = 0V
Crss
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 10A
16
VDS = 100V
200V
12
400V
8
4
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 VGS = 10V
5 ^{ID = 1/2ID}
Pulse Test
3
2
10⁰
7
5
3
2
10^–1
0
50 100 150 200 250
CHANNEL TEMPERATURE Tch (°C)
MITSUBISHI Nch POWER MOSFET
FK10UM-10
HIGH-SPEED SWITCHING USE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
10²
7
5
3
2
10¹
10^–1 2 3
5 7 10⁰
23
td(off)
tf
tr
td(on)
5 7 10¹
DRAIN CURRENT ID (A)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32 _TC=125°C
24
25°C
16
75°C
8
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
Feb.1999