CM75RX-24S Datasheet, PDF (5/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*4
T_C = 100°C^*4, R₁₀₀ = 493Ω
Approximate by Equation^*6
T_C = 25°C^*4
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
Case to Heatsink^*4
R_th(j-c)Q
R_th(j-c)D
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per Inverter IGBT
Per Inverter FWDi
Per Brake IGBT
Per Brake ClampDi
Thermal Grease Applied,
Per 1 Module^*7
—
—
0.25
K/W
—
—
0.40
K/W
—
—
0.35
K/W
—
—
0.63
K/W
—
15
—
K/kW
Mechanical Characteristics
Mounting Torque
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M_t
Main Terminal, M5 Screw
22
27
31
in-lb
M_s
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
d_s
Terminal to Terminal
10.25
—
—
mm
Terminal to Baseplate
12.32
—
—
mm
d_a
Terminal to Terminal
10.28
—
—
mm
Terminal to Baseplate
10.85
—
—
mm
m
370
g
e_c
On Centerline X, Y^*8
±0
—
±100
µm
Recommended Operating Conditons, T_a = 25°C
DC Supply Voltage
V_CC
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across P-N Terminals
Applied Across
G*P-Es*P/G*N-Es*N (* = U, V, W) Terminals
—
600
850
13.5 15.0 16.5
External Gate Resistance
R_G
Per Switch Inverter IGBT
8.2
—
82
Per Switch Brake IGBT
13
—
130
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
LABEL SIDE
0
20.0
21.0
27.8 ^26.8
28.5
29.5
35.3
36.3
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
Tr
UP
Di
UP
Tr
Tr ^VP
UN Di
Di ^VP
Tr
VN
Di
UN
VN
36
1
2
Tr
WP
Di
Br
12
11
Di
WP
Tr
WN
Th
10
9
Di
8
WN _Tr
Br
7
6
5
3
4
0
18.6
20.0
26.8
28.5
35.3
40.5
Volts
Volts
Ω
Ω
MOUNTING SIDE
MOUNTING SIDE
03/13 Rev. 5
Y
MOUNTING
X SIDE
– : CONCAVE
+ : CONVEX
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp
Th: NTC Thermistor
5