CM75RX-24S Datasheet, PDF (4/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Brake Part IGBT/ClampDi
Characteristics
Symbol
Test Conditions
Min.
Typ. Max.
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
—
—
1.0
Gate-Emitter Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
—
—
0.5
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 5mA, V_CE = 10V
5.4
6.0
6.6
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 50A, V_GE = 15V, T_j = 25°C^*5
—
1.80
2.25
(Terminal)
I_C = 50A, V_GE = 15V, T_j = 125°C^*5
—
2.00
—
I_C = 50A, V_GE = 15V, T_j = 150°C^*5
—
2.05
—
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 50A, V_GE = 15V, T_j = 25°C^*5
—
1.70
2.15
(Chip)
I_C = 50A, V_GE = 15V, T_j = 125°C^*5
—
1.90
—
I_C = 50A, V_GE = 15V, T_j = 150°C^*5
—
1.95
—
Input Capacitance
C_ies
—
—
5.0
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
—
—
1.0
Reverse Transfer Capacitance
C_res
—
—
0.08
Gate Charge
Q_G
V_CC = 600V, I_C = 50A, V_GE = 15V
—
117
—
Turn-on Delay Time
t_d(on)
—
—
300
Rise Time
t_r
V_CC = 600V, I_C = 50A, V_GE = ±15V,
—
—
200
Turn-off Delay Time
t_d(off)
R_G = 13Ω, Inductive Load
—
—
600
Fall Time
t_f
—
—
300
Repetitive Peak Reverse Current
I_RRM
V_R = V_RRM, V_GE = 0V
—
—
1
Forward Voltage
V_F
I_E = 50A, V_GE = 0V, T_j = 25°C^*5
—
1.80
2.25
(Terminal)
I_E = 50A, V_GE = 0V, T_j = 125°C^*5
—
1.80
—
I_E = 50A, V_GE = 0V, T_j = 150°C^*5
—
1.80
—
Forward Voltage
V_F
I_E = 50A, V_GE = 0V, T_j = 25°C^*5
—
1.70
2.15
(Chip)
I_E = 50A, V_GE = 0V, T_j = 125°C^*5
—
1.70
—
I_E = 50A, V_GE = 0V, T_j = 150°C^*5
—
1.70
—
Reverse Recovery Time
t_rr^*1
V_CC = 600V, I_E = 50A, V_GE = ±15V
—
—
300
Reverse Recovery Charge
Q_rr^*1
R_G = 13Ω, Inductive Load
—
2.7
—
Turn-on Switching Energy per Pulse
E_on
V_CC = 600V, I_C = I_E = 50A,
—
5.5
—
Turn-off Switching Energy per Pulse
E_off
V_GE = ±15V, R_G = 50Ω,
—
5.3
—
Reverse Recovery Energy per Pulse
E_rr^*1
T_j = 150°C, Inductive Load
—
4.5
—
Internal Gate Resistance
r_g
—
0
—
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
LABEL SIDE
0
20.0
21.0
27.8 ^26.8
28.5
29.5
35.3
36.3
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
Tr
UP
Di
UP
Tr
UN
Di
UN
Tr
VP
Di
VP
Tr
VN
Di
VN
36
1
2
Tr
WP
Di
Br
12
11
Di
WP
Tr Th
WN
10
9
Di
8
WN _Tr
Br
7
6
5
3
4
0
18.6
20.0
26.8
28.5
35.3
40.5
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
mA
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
Ω
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp
Th: NTC Thermistor
4
03/13 Rev. 5