CM75RX-24S Datasheet, PDF (3/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ. Max.
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate-Emitter Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
V_CE(sat)
I_C = 7.5mA, V_CE = 10V
I_C = 75A, V_GE = 15V, T_j = 25°C^*5
(Terminal)
I_C = 75A, V_GE = 15V, T_j = 125°C^*5
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 75A, V_GE = 15V, T_j = 150°C^*5
I_C = 75A, V_GE = 15V, T_j = 25°C^*5
(Chip)
I_C = 75A, V_GE = 15V, T_j = 125°C^*5
I_C = 75A, V_GE = 15V, T_j = 150°C^*5
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Gate Charge
Q_G
V_CC = 600V, I_C = 75A, V_GE = 15V
Turn-on Delay Time
t_d(on)
Rise Time
t_r
V_CC = 600V, I_C = 75A, V_GE = ±15V,
Turn-off Delay Time
t_d(off)
R_G = 8.2Ω, Inductive Load
Fall Time
t_f
Emitter-Collector Voltage
V_EC^*1
(Terminal)
I_E = 75A, V_GE = 0V, T_j = 25°C^*5
I_E = 75A, V_GE = 0V, T_j = 125°C^*5
I_E = 75A, V_GE = 0V, T_j = 150°C^*5
Emitter-Collector Voltage
V_EC^*1
(Chip)
I_E = 75A, V_GE = 0V, T_j = 25°C^*5
I_E = 75A, V_GE = 0V, T_j = 125°C^*5
I_E = 75A, V_GE = 0V, T_j = 150°C^*5
Reverse Recovery Time
Reverse Recovery Charge
t_rr^*1
Q_rr^*1
V_CC = 600V, I_E = 75A, V_GE = ±15V
R_G = 8.2Ω, Inductive Load
Turn-on Switching Energy per Pulse
E_on
V_CC = 600V, I_C = I_E = 75A,
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
E_off
E_rr^*1
V_GE = ±15V, R_G = 8.2Ω,
T_j = 150°C, Inductive Load
Internal Lead Resistance
R_{CC' + EE'}
Main Terminals-Chip,
Per Switch,T_C = 25°C^*4
Internal Gate Resistance
r_g
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
LABEL SIDE
0
20.0
21.0
27.8 ^26.8
28.5
29.5
35.3
36.3
—
—
—
—
5.4
6.0
—
1.80
—
2.00
—
2.05
—
1.70
—
1.90
—
1.95
—
—
—
—
—
—
—
175
—
—
—
—
—
—
—
—
—
1.80
—
1.80
—
1.80
—
1.70
—
1.70
—
1.70
—
—
—
4.0
—
7.3
—
8.0
—
6.9
—
—
—
0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
Tr
UP
Di
UP
Tr
Tr ^VP
UN Di
Di ^VP
Tr
VN
Di
UN
VN
36
1
2
Tr
WP
Di
Br
Di
WP
Tr
WN
Th
Di
WN _Tr
Br
3
4
1.0
0.5
6.6
2.25
—
—
2.15
—
—
7.5
1.5
0.13
—
300
200
600
300
2.25
—
—
2.15
—
—
300
—
—
—
—
2.4
—
0
18.6
12
20.0
11
10
26.8
9
28.5
8
7
35.3
6
40.5
5
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
03/13 Rev. 5
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp
Th: NTC Thermistor
3