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| CM600HG-130H Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600HG-130H
Single IGBTMOD⢠HVIGBT Module
600 Amperes/6500 Volts
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
101
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
101
100
10-1
102
10
VCC = 3600V
VGE = ±15V
RG(off) = 24Ω
RG(on) = 10Ω
LS = 150nH
Tj = 125°C
103
104
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
8
6
4
2
0
0
103
VCC = 3600V
VGE = ±15V
RG(off) = 24Ω
RG(on) = 10Ω
LS = 150nH
Tj = 125°C
200 400 600 800 1000 1200 1400
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
Cies
102
101
VGE = 15V
f = 100kHz
Tj = 25°C
100
10-1
100
Coes
Cres
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
10-1
102
VCC = 3600V
VGE = ±15V
RG(off) = 24Ω
RG(on) = 10Ω
LS = 150nH
Tj = 125°C
103
104
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
10
VCC = 3600V
8
VGE = ±15V
IC = 600A
LS = 150nH
6 Tj = 125°C
4
2
0
0 5 10 15 20 25 30 35 40
GATE RESISTANCE, RG, (Ω)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
7
VGE = 0V
Tj = 25°C
6
Tj = 125°C
5
4
3
2
1
0
0 200 400 600 800 1000 1200 1400
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
10
VCC = 3600V
VGE = ±15V
8 RG(off) = 24Ω
RG(on) = 10Ω
LS = 150nH
6 Tj = 125°C
4
2
0
0
10
200 400 600 800 1000 1200 1400
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
8
6
4
VCC = 3600V
VGE = ±15V
2
IC = 600A
LS = 150nH
Tj = 125°C
0
0 5 10 15 20 25 30 35 40
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
SINGLE PULSE
1.0
TC = 25°C
IGBT = Rth(j-c)Q =
14°K/kW
0.8 FWDI = Rth(j-c)D =
22°K/kW
0.6
0.4
0.2
0
10-3
10-2
10-1
100
101
TIME, (s)
5/08
5
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