CM600HG-130H Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600HG-130H
Single IGBTMOD™ HVIGBT Module
600 Amperes/6500 Volts
6000
5000
4000
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25°C
16V
15V
18V
14V
V_GE = 20V
13V
12V
3000
2000
10V
1000
0
0
4
8 12 16 20
COLLECTOR-EMITTER VOLTAGE, V_CE(sat), (VOLTS)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
3.5
V_CC = 3600V
3.0 V_GE = ±15V
R_G(on) = 10Ω
2.5 L_S = 150nH
T_j = 125°C
2.0
1.5
1.0
0.5
0
0 200 400 600 800 1000 1200 1400
EMITTER CURRENT, I_E, (AMPERES)
12000
10000
8000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 5V
T_j = 25°C
T_j = 125°C
6000
4000
2000
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
8
7
V_GE = 0V
T_j = 25°C
6
T_j = 125°C
5
4
3
2
1
0
0 200 400 600 800 1000 1200 1400
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
3.5
V_CC = 3600V
3.0 V_GE = ±15V
I_C = 600A
2.5 L_S = 150nH
T_j = 125°C
2.0
1.5
1.0
0.5
0
0
10¹
5 10 15 20 25 30 35 40
GATE RESISTANCE, R_G, (Ω)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10⁰
10^-1
10²
V_CC = 3600V
V_GE = ±15V
R_G(off) = 24Ω
R_G(on) = 10Ω
L_S = 150nH
T_j = 125°C
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
3.5
V_CC = 3600V
3.0 V_GE = ±15V
R_G(on) = 10Ω
2.5 L_S = 150nH
T_j = 125°C
2.0
1.5
1.0
0.5
0
0 200 400 600 800 1000 1200 1400
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
3.5
V_CC = 3600V
3.0 V_GE = ±15V
I_C = 600A
2.5 L_S = 150nH
T_j = 125°C
2.0
1.5
1.0
0.5
0
0
10¹
5 10 15 20 25 30 35 40
GATE RESISTANCE, R_G, (Ω)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10⁰
10^-1
10²
V_CC = 3600V
V_GE = ±15V
R_G(off) = 24Ω
R_G(on) = 10Ω
L_S = 150nH
T_j = 125°C
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
4
5/08