CM600HG-130H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM600HG-130H
Single IGBTMOD™ HVIGBT Module
600 Amperes/6500 Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V, T_j = 25°C

V_CE = V_CES, V_GE = 0V, T_j = 125°C
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 60mA, V_CE = 10V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 600A, V_GE = 15V, T_j = 25°C

I_C = 600A, V_GE = 15V, T_j = 125°C
Input Capacitance
C_ies
V_CE = 10V, V_GE = 0V,
Output Capacitance
C_oes
f = 100kHz,
Reverse Transfer Capacitance
C_res
T_j = 25°C
Total Gate Charge
Q_G
V_CC = 3600V, I_C = 600A, V_GE = 15V
Emitter-Collector Voltage**
V_EC
I_E = 600A, V_GE = 0V, T_j = 25°C

I_E = 600A, V_GE = 0V, T_j = 125°C
Turn-On Delay Time
t_d(on)
V_CC = 3600V, I_C = 600A,
Turn-On Rise Time
t_r
V_GE1 = -V_GE2 = 15V, R_G(on) = 10Ω,
Turn-On Switching Energy
E_on
T_j = 125°C, t_off = 60μs
Turn-Off Delay Time
t_d(off)
V_CC = 3600V, I_C = 600A,
Turn-Off Fall Time 1
t_f1
V_GE1 = -V_GE2 = 15V,
Turn-Off Fall Time 2
t_f2
R_G(off) = 24Ω,
Turn-Off Switching Energy
E_off
T_j = 125°C, t_off = 60μs
Reverse Recovery Time 1**
t_rr1
V_CC = 3600V, I_E = 600A,
Reverse Recovery Time 2**
t_rr2
di_e/dt = -2000A/μs,
Reverse Recovery Charge**
Q_rr
T_j = 125°C,
Reverse Recovery Energy**
E_rec
t_off = 60μs
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
–
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
30
6.0
–
5.1
5.0
124
7.6
2.2
9.9
4.0
3.6
1.2
0.35
4.5
6.6
0.5
3.3
3.5
1.0
2.4
1100
2.0
Max.
10.0
90.0
7.0
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Units
mA
mA
Volts
μA
Volts
Volts
nF
nF
nF
μC
Volts
Volts
μs
μs
J/P
μs
μs
μs
J/P
μs
μs
μC
J/P
Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
R_th(j-c) Q
Per IGBT
–
Thermal Resistance, Junction to Case
R_th(j-c) D
Per FWDi
–
Contact Thermal Resistance, Case to Fin
R_th(c-f)
Per Module, Thermal Grease Applied
–
–
14.0 K/kW
–
22.0 K/kW
6.0
–
K/kW
Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Comparative Tracking Index
CTI
–
Clearance
–
–
Creepage Distance
–
–
Internal Inductance
L_C-E(int)
–
Internal Lead Resistance
R_C-E(int)
–
Min.
Typ.
Max. Units
600
–
–
–
26.0
–
–
mm
56.0
–
–
mm
–
18
–
nH
–
0.18
–
mΩ
5/08
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