CM200RX-12A Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
400
15
V_GE = 20V
T_j = 25°C
13
12
300
200
11
100
10
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
10³
t_f
t_d(off)
10²
t_d(on)
t_r
10¹
10⁰
10⁰
V_CC = 300V
V_GE = ±15V
I_C = 200A
T_j = 125°C
Inductive Load
10¹
GATE RESISTANCE, R_G, (Ω)
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0
100
200
300
400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE
(INVERTER PART
-VTSY. PVICCEAL)
10²
V_GE = 0V
C_ies
10¹
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
V_CC = 300V
V_GE = ±15V
R_G = 5.1Ω
T_j = 25°C
Inductive Load
10²
10¹
10¹
I_rr
t_rr
10²
10³
EMITTER CURRENT, I_E, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
I_C = 80A
2
0
6
10⁴
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
t_f
t_d(off)
10² _td(on)
10¹
10⁰
10¹
V_CC = 300V
t_r
V_GE = ±15V
R_G = 5.1Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE VS. VGE
(INVERTER PART)
20
I_C = 200A
16
V_CC = 200V
12
V_CC = 300V
8
4
0
0
200 400
600 800
GATE CHARGE, Q_G, (nC)
Rev. 11/08
5