CM200RX-12A Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
—
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 20mA, V_CE = 10V
5
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
—
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 200A, V_GE = 15V, T_j = 25°C
—
I_C = 200A, V_GE = 15V, T_j = 125°C
—
I_C = 200A, V_GE = 15V, Chip
—
Input Capacitance
C_ies
—
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
—
Reverse Transfer Capacitance
C_res
—
Total Gate Charge
Q_G
V_CC = 300V, I_C = 200A, V_GE = 15V
—
Inductive
Turn-on Delay Time
t_d(on)
—
Load
Turn-on Rise Time
t_r
V_CC = 300V, I_C = 200A,
—
Switch
Turn-off Delay Time
t_d(off)
V_GE = ±15V,
—
Time
Turn-off Fall Time
t_f
R_G = 5.6Ω, I_E = 150A,
—
Reverse Recovery Time*
t_rr
Inductive Load Switching Operation
—
Reverse Recovery Charge*
Qrr
—
—
1.0
mA
6
7
Volts
—
0.5
µA
1.7
2.1
Volts
1.9
—
Volts
1.6
—
Volts
—
27.0
nF
—
2.7
nF
—
0.8
nF
530
—
nC
—
120
ns
—
150
ns
—
350
ns
—
600
ns
—
200
ns
5.0
—
µC
Emitter-Collector Voltage*
V_EC
I_E = 200A, V_GE = 0V, T_j = 25°C
—
2.0
2.8
Volts
I_E = 200A, V_GE = 0V, T_j = 125°C
—
1.95
—
Volts
I_E = 200A, V_GE = 0V, Chip
—
1.9
—
Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case**
R_th(j-c)Q
Per IGBT
Thermal Resistance, Junction to Case**
R_th(j-c)D
Per FWDi
Contact Thermal Resistance**
R_th(c-f)
Thermal Grease Applied
Internal Gate Resistance
R_Gint
T_C = 25°C
External Gate Resistance
R_G
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T_C, T_f measured point is just under the chips.
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT FWDi NTC Thermistor
Min.
Typ.
Max. Units
—
—
0.17 °C/W
—
—
0.33 °C/W
—
0.015
—
°C/W
—
0
—
Ω
3.0
—
30
Ω
0
17.4
24.4
28.0
35.0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
UP
35
UN
VP
VN
UP
UN
36
VP
VN
1
2
WP
WP
3
WN
WN
Br
12
Th
11
10
9
8
Br 7
6
5
4
0
18.3
26.8
39.7
Rev. 11/08
Dimensions in mm (Tolerance: ±1mm)
3