CM200RX-12A Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Brake Sector
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current*
Forward Voltage Drop *
I_CES
V_CE = V_CES, V_GE = 0V
—
—
1.0
mA
V_GE(th)
I_C = 10mA
5
6
7
Volts
I_GES
V_GE = V_GES, V_CE = 0V
—
—
0.5
µA
V_CE(sat)
I_C = 100A, V_GE = 15V, T_j = 25°C
—
1.7
2.1
Volts
I_C = 100A, V_GE = 15V, T_j = 125°C
—
1.9
—
Volts
I_C = 100A, V_GE = 15V, Chip
—
1.6
—
Volts
C_ies
—
—
13.3
nF
C_oes
V_CE = 10V, V_GE = 0V
—
—
1.4
nF
C_res
—
—
0.45
nF
Q_G
V_CC = 300V, I_C = 100A, V_GE = 15V
—
300
—
nC
I_RRM
V_R = V_RRM
—
—
1.0
mA
V_F
I_F = 100A, T_j = 25°C
—
2.0
2.8
Volts
I_F = 100A, T_j = 125°C
—
1.95
—
Volts
I_F = 100A, Chip
—
1.9
—
Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
R_th(j-c)Q
R_th(j-c)D
R_th(j-f)
R_Gint
R_G
Test Conditions
Per IGBT
Per FWDi
Thermal Grease Applied
T_C = 25°C
Min.
Typ.
Max. Units
—
—
0.31 °C/W
—
—
0.59 °C/W
—
0.015
—
°C/W
—
0
—
Ω
6
—
62
Ω
NTC Thermistor Sector, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Zero Power Resistance
R
T_C = 25°C
4.85
Deviation of Resistance
∆R/R
T_C = 100°C, R₁₀₀ = 493Ω
–7.3
B Constant
B_(25/50)
B = (InR₁ – InR₂) / (1/T₁ – 1/T₂)***
—
Power Dissipation
P₂₅
T_C = 25°C
—
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T_C, T_f measured point is just under the chips.
***R1: Resistance at Absolute Temperature T₁(K), R₂: Resistance at Absolute Temperature T₂(K), T(K) = t(°C) + 273.15
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
4
Rev. 11/08