CM1200DB-34N Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
2400
2000
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 125°C
15V
V_GE = 20V ^12V
1200
10V
800
400
8V
0
01 23 45 6
COLLECTOR-EMITTER VOLTAGE, V_CE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
500
400
V_CC = 850V
V_GE = ±15V
R_G(on) = 1.3Ω
T_j = 125°C
300
200
100
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
5
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10³
400 800 1200 1600 2000 2400
EMITTER CURRENT, I_E, (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
C_ies
10²
10¹
C_oes
V_GE = 15V
f = 100kHz
T_j = 25°C
10⁰
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
2500
2000
1500
1000
500
V_CC ≤ 1200V
V_GE = ±15V
R_G(off) ≥ 3.3Ω
T_j = 125°C
Module
Chip
0
0
500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 20V
T_j = 25°C
T_j = 125°C
1600
1200
800
400
0
0
10¹
2 4 6 8 10 12
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
10⁰
t_d(on)
t_r
t_f
10^-1
10^-2
10²
V_CC = 850V
V_GE = ±15V
R_G(on) = 1.3Ω
T_j = 125°C
Inductive Load
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE, V_GE
20
I_C = 1200A
V_CC = 850V
16 T_j = 25°C
12
8
4
0
0
2
4
6
8
10
GATE CHARGE, Q_G, (μC)
12/12 Rev. 1
5