CM1200DB-34N Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
A
D
D
U
K (4 TYP)
BC
S
4
2
3
E1
G1
1
Z
AA
E2
G2
C1
C2
H
G
T
J
AB
N
F
Q
E
Y
M (3 TYP)
V
W
L
(6 PLACES)
X
4(E1) 2(C2)
R
E1
C2
P
G1
G2
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
5.12±0.02
5.51±0.02
4.88±0.01
2.24±0.01
1.18±0.008
0.79±0.004
2.09±0.008
1.57±0.008
1.73±0.008
M8 Metric
0.28 Dia.
M4 Metric
2.17±0.01
Millimeters
130.0±0.5
140.0±0.5
124.0±0.25
57.0±0.25
30.0±0.2
20.0±0.1
53.0±0.2
40.0±0.2
44.0±0.2
M8
7.0 Dia.
M4
55.2±0.3
Q
C1
E2
3(C1) 1(E2)
Dimensions
Inches
Millimeters
P
1.50+0.04/-0.0 38.0+1.0/-0.0
Q
0.2±0.008
5.0±0.2
R
0.65 Min. 16.5 Min.
S
0.30 Min.
7.7 Min.
T
0.47±0.008 11.85±0.2
U
1.16±0.02
29.5±0.5
V
0.45±0.008 11.5±0.2
W
0.55±0.008 14.0±0.2
X
1.10+0.04/-0.0 28.0+1.0/-0.0
Y
1.38±0.008 35.0±0.2
Z
0.63±0.008 16.0±0.2
AA
0.71±0.008 18.0±0.2
AB
2.24±0.008 57.0±0.2
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V_CE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DB-34N is a 1700V
(V_CES), 1200 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
V_CES
Amperes
Volts (x 50)
CM
1200
34
12/12 Rev. 1
1