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CM1200DB-34N Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD⢠HVIGBT Module
1200 Amperes/1700 Volts
Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
IGBT Part, 1/2 Module
FWDi Part, 1/2 Module
λgrease = 1W/mâ¢K, 1/2 Module
Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Comparative Tracking Index
CTI
â
Clearance Distance in Air
Creepage Distance Along Surface
Internal Inductance
Internal Lead Resistance
da
ds
LC-E(int)
RC-E(int)
â
â
IGBT Part
TC = 25°C
Min.
Typ.
Max. Units
â
â
0.018 °C/W
â
â
0.040 °C/W
â
0.016
â
°C/W
Min.
Typ.
Max. Units
600
â
â
â
9.5
â
â
mm
15.0
â
â
mm
â
30
â
nH
â
0.28
â
mâ¦
4
12/12 Rev. 1
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