CM1000DUC-34SA Datasheet, PDF (5/6 Pages) Powerex Power Semiconductors – Mega Power Dual IGBT 1000 Amperes/1700 Volts

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CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
2000
1500
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
V_GE = 20V
15
13.5
T_j = 25°C
12
1000
11
500
10
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
10⁴
10³
10²
V_GE = 15V
T_j = 25°C
T_j = 125°C
T_j = 150°C
10¹
0 1 23 456
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
t_d(off)
10³
t_d(on^tf)
10²
t_r
V_CC = 1000V
10^{1 V}GE ^{= ±15V}
R_G = 2.0Ω
T_j = 150°C
Inductive Load
10⁰
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
4.5
4.0
V_GE = 15V
T_j = 25°C
3.5
T_j = 125°C
3.0
T_j = 150°C
2.5
2.0
1.5
1.0
0.5
0
0
500 1000 1500 2000
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
C_ies
10²
10¹
C_oes
C_res
10⁰
V_GE = 0V
T_j = 25°C
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10⁴
V_CC = 1000V
V_GE = ±15V
I_C = 1000A
T_j = 125°C
10^{3 Inductive Load}
10²
t_f
t_d(off)
t_d(on)
t_r
10¹
10^-1
10⁰
EXTERNAL GATE RESISTANCE, R_G, (Ω)
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
T_j = 25°C
8
I_C = 2000A
6
I_C = 1000A
4
I_C = 600A
2
0
6
10⁴
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_f
t_d(on)
t_d(off)
10²
t_r
V_CC = 1000V
10¹ V_GE = ±15V
R_G = 2.0Ω
T_j = 125°C
Inductive Load
10⁰
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10⁴
V_CC = 1000V
V_GE = ±15V
I_C = 1000A
T_j = 150°C
Inductive Load
10³
t_d(off)
t_d(on)
t_f
t_r
10²
10⁰
EXTERNAL GATE RESISTANCE, R_G, (Ω)
10¹
03/13 Rev. 3
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