CM1000DUC-34SA Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – Mega Power Dual IGBT 1000 Amperes/1700 Volts

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CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Case to Heatsink
Per IGBT
Per Diode
Thermal Grease Applied
(Per 1 Module)^*6
—
—
15
K/kW
—
—
24
K/kW
—
6
—
K/kW
Mechanical Characteristics
Mounting Torque
Creepage Distance
M_t
Main Terminals, M6 Screw
22
27
31
in-lb
M_s
Mounting to Heatsink, M6 Screw
22
27
31
in-lb
d_s
Terminal to Terminal
24
—
—
mm
Terminal to Baseplate
33
—
—
mm
Clearance
d_a
Terminal to Terminal
14
—
—
mm
Terminal to Baseplate
33
—
—
mm
Weight
Flatness of Baseplate
m
—
1450
— Grams
e_c
On Centerline X, Y^*7
-50
—
+100
µm
Recommended Operating Conditons, T_a = 25°C
(DC) Supply Voltage
V_CC
Applied Across C1-E2
—
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across G1-Es1/G2-Es2
13.5
External Gate Resistance
R_G
Per Switch
2.0
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
119.3
39 mm
39 mm
106.2
93.2
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
Y1
Y2
X
77.8
64.7
51.7
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
BOTTOM
LABEL SIDE
BOTTOM
BOTTOM
– CONCAVE
+ CONVEX
36.3
23.2
10.2
0
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
1000
15.0
—
1200
16.5
6.0
Volts
Volts
Ω
4
03/13 Rev. 3