CM1000DUC-34SA Datasheet, PDF (3/6 Pages) Powerex Power Semiconductors – Mega Power Dual IGBT 1000 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM1000DUC-34SA
Mega Power Dual IGBT
1000 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
—
Gate-Emitter Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
—
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
I_C = 100mA, V_CE = 10V
5.4
V_CE(sat)
I_C = 1000A, V_GE = 15V, T_j = 25°C^*5
—
(Terminal = Chip) I_C = 1000A, V_GE = 15V, T_j = 125°C^*5
—
I_C = 1000A, V_GE = 15V, T_j = 150°C^*5
—
Input Capacitance
C_ies
—
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
—
Reverse Transfer Capacitance
C_res
—
Gate Charge
Q_G
V_CC = 1000V, I_C = 1000A, V_GE = 15V
—
Turn-on Delay Time
t_d(on)
—
Rise Time
t_r
V_CC = 1000V, I_C = 1000A, V_GE = ±15V,
—
Turn-off Delay Time
t_d(off)
R_G = 2.0Ω, Inductive Load
—
Fall Time
Emitter-Collector Voltage
t_f
—
V_EC^*1
I_E = 1000A, V_GE = 0V, T_j = 25°C^*5
—
(Terminal = Chip) I_E = 1000A, V_GE = 0V, T_j = 125°C^*5
—
I_E = 1000A, V_GE = 0V, T_j = 150°C^*5
—
Reverse Recovery Time
t_rr^*1
V_CC = 1000V, I_E = 900A, V_GE = ±15V
—
Reverse Recovery Charge
Q_rr^*1
R_G = 2.0Ω, Inductive Load
—
Turn-on Switching Energy per Pulse
E_on
V_CC = 1000V, I_C = I_E = 1000A,
—
Turn-off Switching Energy per Pulse
E_off
V_GE = ±15V, R_G = 2.0Ω, T_j = 150°C,
—
Reverse Recovery Energy per Pulse
E_rr^*1
Inductive Load
—
Internal Lead Resistance
R_{CC' + EE'}
Main Terminals-Chip,
—
Per Switch,T_C = 25°C^*4
Internal Gate Resistance
r_g
Per Switch
—
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
119.3
106.2
93.2
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
77.8
64.7
51.7
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
36.3
23.2
10.2
0
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
Typ.
—
—
6.0
1.9
2.1
2.15
—
—
—
4700
—
—
—
—
4.0
2.8
2.6
—
270
239
269
130
0.286
0.56
Max.
1.0
10
6.6
2.4
—
—
260
27
5
—
900
350
1250
400
5.2
—
—
400
—
—
—
—
—
—
Units
mA
µA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
03/13 Rev. 3
3