FG1000BV-90DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
25
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
20 _{VRG = 17V}
CS = 0.7µF
tgq
LS = 0.3µH
15 Tj = 125°C
ts
10
5
0
200 400 600 800 1000
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
500
400
300
200
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
100
VRG = 17V
CS = 0.7µF
LS = 0.3µH
Tj = 125°C
0
200 400 600 800 1000
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
1.6
diT/dt = 300A /µs
1.4
200A /µs
1.2
1.0
100A /µs
0.8
0.6
VD = 2250V
0.4
IGM = 25A
diG/dt = 10A/µs
0.2
CS = 0.7µF
RS = 5Ω
0
Tj = 125°C
200 400 600 800 1000 1200
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
VD = 2250V
VDM = 3375V
IT = 1000A
40
VRG = 17V
CS = 0.7µF
LS = 0.3µH
30
Tj = 125°C
20
tgq
10
ts
0
10 20 30 40 50
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
500
400
300
200
VD = 2250V
VDM = 3375V
IT = 1000A
100
VRG = 17V
CS = 0.7µF
LS = 0.3µH
Tj = 125°C
0
10 20 30 40 50
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
2.5
2.0
1.5
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
1.0
VRG = 17V
CS = 0.7µF
LS = 0.3µH
Tj = 125°C
0.5
200 400 600 800 1000
TURN OFF CURRENT (A)
Aug.1998