FG1000BV-90DA Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

FG1000BV-90DA
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
390 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
q ITQRM Repetitive controllable on-state current ..........1000A
q IT(AV) Average on-state current .......................400A
q VDRM Repetitive peak off state voltage ..................4500V
q Anode short type
φ 47
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 47
φ 75 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
DC reverse voltage
Repetitive peak off-state voltage⁺
Non-repetitive peak off-state voltage⁺
DC off-state voltage⁺
+ : VGK = –2V
Voltage class
90DA
17
17
17
4500
4500
3600
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I^2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 3375V, Tj = 125°C, CS = 0.7µF, LS = 0.3µH
f = 60Hz, sine wave θ = 180°, Tf = 70°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 2250V, IGM = 20A, Tj = 125°C
Recommended value 13
Standard value
Ratings
1000
630
400
8.4
2.9 × 10⁵
1000
10
17
60
500
240
15
45
100
–40 ~ +125
–40 ~ +150
12 ~ 15
530
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A²s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998