FG1000BV-90DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
2000
1750
θ
1500 _360°
RESISTIVE,
1250 INDUCTIVE
60°
LOAD
1000
θ = 30°
120° ^180°
90°
750
500
250
0
0
100
200
300
400
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
2000
1750
270° DC
180°
1500
120°
90°
60°
1250
θ = 30°
1000
750
500
250
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
100 200 300 400 500 600 700 800
AVERAGE ON-STATE CURRENT (A)
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
140
130
θ
120
360°
RESISTIVE,
110
INDUCTIVE
LOAD
100
90
80
70
θ = 30° 60° 90° 120° 180°
60
0
100
200
300
400
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
140
130
θ
120
360°
110
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60 θ = 30° 60° 120° 270°
90° 180° DC
50
40
0 100 200 300 400 500 600 700 800
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
8.0
tgt
IT = 1000A, VD = 2250V
diT/dt = 500A/µs
diG/dt = 10A/µs
Tj = 125°C
6.0
4.0
td
2.0
0
0
10 20 30 40 50
TURN ON GATE CURRENT (A)
Aug.1998