CM800HB-66H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
10⁰
7
5
3
2
10^–1
7
5 _{5 7 102}
td(off)
td(on)
tr
tf
VCC = 1650V, VGE = ±15V
RG = 2.5Ω, Tj = 125°C
Inductive load
2 3 5 7 10³ 2 3 5
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.012°C/ W
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1650V, Tj = 125°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 2.5Ω}
2
10¹
Irr
10³
7
7
5
5
3
3
2
2
10⁰
7
5 _{5 7 102}
23
trr
5 7 10³
23
10²
7
55
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.024°C/ W
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
20
VCC = 1650V
IC = 800A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
Feb. 2000