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| CM800HB-66H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=14V
VGE=15V
VGE=20V
VGE=13V
VGE=12V
VGE=11V VGE=10V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
VCE=10V
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0
400
800 1200 1600
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 1600A
6
IC = 800A
4
2
IC = 320A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj=25°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
103
7
VGE = 0V, Tj = 25°C
5
Cies, Coes : f = 100kHz
3
Cres
: f = 1MHz
2
Cies
102
7
5
3
2
101
Coes
7
5
3
2
Cres
100
10â1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2000
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