CM800HB-66H Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800HB-66H
q IC ................................................................... 800A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
4 - M8 NUTS
C
C
CM
E
E
C
E
G
3 - M4 NUTS
10.65
48.8
10.35
61.5
18
6 - φ7MOUNTING HOLES
5.2
C
C
C
G
E
E
E
CIRCUIT DIAGRAM
15
40
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000